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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement Mode MOSFETs
Designed for broadband commercial and military applications up to 200 MHz frequency range. The high-power, high-gain and broadband performance of these devices make possible solid state transmitters for FM broadcast or TV channel frequency bands. * Guaranteed Performance at 150 MHz, 28 V: Output Power = 80 W Gain = 11 dB (13 dB Typ) Efficiency = 55% Min. (60% Typ) * Low Thermal Resistance * Ruggedness Tested at Rated Output Power * Nitride Passivated Die for Enhanced Reliability * Low Noise Figure -- 1.5 dB Typ at 2.0 A, 150 MHz * Excellent Thermal Stability; Suited for Class A Operation MAXIMUM RATINGS
Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Temperature Range Symbol VDSS VDGO VGS ID PD Tstg TJ Value 65 65 40 9.0 220 1.26 -65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C G S D
MRF173 MRF173CQ
80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFETs
CASE 211-11, STYLE 2 (MRF173)
CASE 316-01, STYLE 2 (MRF173CQ)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.8 Unit C/W
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage (VDS = 0 V, VGS = 0 V) ID = 50 mA Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0 V) Gate-Source Leakage Current (VGS = 40 V, VDS = 0 V) V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 2.0 1.0 V mA A
ON CHARACTERISTICS
Gate Threshold Voltage (VDS = 10 V, ID = 50 mA) Drain-Source On-Voltage (VDS(on), VGS = 10 V, ID = 3.0 A) Forward Transconductance (VDS = 10 V, ID = 2.0 A) VGS(th) VDS(on) gfs 1.0 -- 1.8 3.0 -- 2.2 6.0 1.4 -- V V mhos (continued) NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 8
(c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1997
MRF173 MRF173CQ 1
ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Output Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0 V, f = 1.0 MHz) Ciss Coss Crss -- -- -- 110 105 10 -- -- -- pF pF pF
FUNCTIONAL CHARACTERISTICS
Noise Figure (VDD = 28 V, f = 150 MHz, IDQ = 50 mA) Common Source Power Gain (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) Drain Efficiency (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) Electrical Ruggedness (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) Load VSWR 30:1 at all phase angles Series Equivalent Input Impedance (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) Series Equivalent Output Impedance (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) Series Equivalent Input Impedance (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) Series Equivalent Output Impedance (VDD = 28 V, Pout = 80 W, f = 150 MHz, IDQ = 50 mA) MRF173 MRF173 MRF173CQ MRF173CQ NF Gps -- 11 55 1.5 13 60 -- -- -- dB dB %
No Degradation in Output Power
Zin Zout Zin Zout
-- -- -- --
2.99 - j4.5 2.68 - j1.3 1.35 - j5.15 2.72 - j149
-- -- -- --
Ohms Ohms Ohms Ohms
RFC1 R2 R1 C8 + - C9 Z1 C10 RFC2 D.U.T. RF INPUT C1 C2 C16 R3 L1 C3 L2 C4 C5 C15 C6 L3 L4 C11 C12 + - C13
VDD = 28 V + Vdc C14 - RF OUTPUT C7
C1, C15 -- 470 pF Unelco C2, C3, C5 -- 9-180 pF, Arco 463 C4, C6 -- 15 pF, Unelco C7 -- 5-80 pF, Arco 462 C8, C10, C14, C16 -- 0.1 F C9, C13 -- 50 F, 50 Vdc C11, C12 -- 680 pF, Feed Through L1 -- #16 AWG, 1-1/4 Turns, 0.3 ID L2 -- #16 AWG Hairpin 1 long
L3 -- #14 AWG Hairpin 0.8 long L4 -- #14 AWG Hairpin 1.1 long RFC1 -- Ferroxcube VK200-19/4B RFC2 -- 18 Turns #18 AWG Enameled, 0.3 ID R1 -- 10 k, 10 Turns Bourns R2 -- 1.8 k, 1/4 W R3 -- 10 k, 1/2 W Z1 -- 1N5925A Motorola Zener
Figure 1. 150 MHz Test Circuit
MRF173 MRF173CQ 2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
120 f = 100 MHz Pout , OUTPUT POWER (WATTS) 100 80 60 40 20 0 150 MHz Pout , OUTPUT POWER (WATTS) 80 70 60 50 150 MHz 40 30 20 10 0 0 2.0 4.0 6.0 8.0 10 VDD = 13.5 V IDQ = 50 mA 12 14 200 MHz f = 100 MHz
200 MHz
VDD = 28 V IDQ = 50 mA
0
1
2
3
4
5
6
7
8
9
10
Pin, INPUT POWER (WATTS)
Pin, INPUT POWER (WATTS)
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Input Power
140 Pout , OUTPUT POWER (WATTS) 120 100 80 60 40 20 0 10 12 14 16 18 20 22 24 26 28 30 1.0 W IDQ = 50 mA f = 100 MHz Pin = 4.0 W 3.0 W 2.0 W
140 120 100 80 60 40 20 0 10 12 14 16 18 20 22 24 26 28 30 2.0 W IDQ = 50 mA f = 150 MHz Pin = 8.0 W 6.0 W 4.0 W
VDD, SUPPLY VOLTAGE (VOLTS)
Pout , OUTPUT POWER (WATTS)
VDD, SUPPLY VOLTAGE (VOLTS)
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
140 Pin = 14 W 10 W G PS , POWER GAIN (dB) 120 100 80 60 40 20 0 10 12 14 16 18 20 22 24 26 28 30 6.0 W 4.0 W IDQ = 50 mA f = 200 MHz
22 20 Pout = 80 W VDD = 28 V IDQ = 50 mA
Pout , OUTPUT POWER (WATTS)
18 16 14 12 10 8.0 6.0 4.0 2.0 20 40 60 80
VDD, SUPPLY VOLTAGE (VOLTS)
100 120 140 160 f, FREQUENCY (MHz)
180
200
220
Figure 6. Output Power versus Supply Voltage
Figure 7. Power Gain versus Frequency
MOTOROLA RF DEVICE DATA
MRF173 MRF173CQ 3
80 Pout , OUTPUT POWER (WATTS) 70 60 50 40 30 20 10 0 -14 -12 -10 -8.0 -6.0 -4.0 -2.0 0 2.0 VGS, GATE-SOURCE VOLTAGE (VOLTS) 4.0 6.0 f = 150 MHz Pin = CONSTANT VDS = 28 V IDQ = 50 mA VGS(th) = 3.0 V
6.0 5.0 4.0 3.0 2.0 1.0 0 VDS = 10 V VGS(th) = 3.0 V
ID , DRAIN CURRENT (AMPS)
0
1.0
2.0 3.0 4.0 5.0 VGS, GATE-SOURCE VOLTAGE (VOLTS)
6.0
Figure 8. Output Power versus Gate Voltage
Figure 9. Drain Current versus Gate Voltage
VGS , GATE-SOURCE VOLTAGE (NORMALIZED)
1.2 VDS = 28 V
420 Ciss 360 C oss , CAPACITANCE (pF) 300 240 180 120 60 0 25 50 75 100 125 150 175 0 0 4 Crss Coss
140 120 100 VGS = 0 V FREQ = 1 MHz 80 60 40 20 28 0 Crss , C iss , CAPACITANCE (pF)
1.1 ID = 3.0 A 1.0 A 500 mA
1.0
0.9
0.8
50 mA
0.7 -25
TC, CASE TEMPERATURE (C)
8 12 16 20 24 VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 10. Gate-Source Voltage versus Case Temperature
Figure 11. Capacitance versus Drain Voltage
10 ID , DRAIN CURRENT (AMPS) 5.0
2.0 1.0 0.5 TC = 25C
0.2 0.1 1.0 2.0 4.0 6.0 10 20 40 VDS, DRAIN-SOURCE VOLTAGE (VOLTS) 60 100
Figure 12. DC Safe Operating Area
MRF173 MRF173CQ 4
MOTOROLA RF DEVICE DATA
DESIGN CONSIDERATIONS The MRF173/CQ is a RF MOSFET power N-channel enhancement mode field-effect transistor (FET) designed for VHF power amplifier applications. Motorola's RF MOSFETs feature a vertical structure with a planar design, thus avoiding the processing difficulties associated with V-groove power FETs. Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs. The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal, thus facilitating manual gain control, ALC and modulation. DC BIAS The MRF173/CQ is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. See Figure 9 for a typical plot of drain current versus gate voltage. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many
applications. The MRF173/CQ was characterized at IDQ = 50 mA, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of the MRF173/CQ may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. (see Figure 8.) AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar VHF transistors are suitable for MRF173/CQ. See Motorola Application Note AN721, Impedance Matching Networks Applied to RF Power Transistors. The higher input impedance of RF MOSFETs helps ease the task of broadband network design. Both small-signal scattering parameters and large-signal impedances are provided. While the s-parameters will not produce an exact design solution for high power operation, they do yield a good first approximation. This is an additional advantage of RF MOS power FETs.
MOTOROLA RF DEVICE DATA
MRF173 MRF173CQ 5
PACKAGE DIMENSIONS
A U M
1
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH.
Q
M
4
R
B
2
3
D K J H C E
SEATING PLANE
DIM A B C D E H J K M Q R U
INCHES MIN MAX 0.960 0.990 0.465 0.510 0.229 0.275 0.216 0.235 0.084 0.110 0.144 0.178 0.003 0.007 0.435 --- 45 _NOM 0.115 0.130 0.246 0.255 0.720 0.730
MILLIMETERS MIN MAX 24.39 25.14 11.82 12.95 5.82 6.98 5.49 5.96 2.14 2.79 3.66 4.52 0.08 0.17 11.05 --- 45 _NOM 2.93 3.30 6.25 6.47 18.29 18.54
STYLE 2: PIN 1. 2. 3. 4.
SOURCE GATE SOURCE DRAIN
CASE 211-11 ISSUE N
D R
3
F
4
K
NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495
1
Q
2
L B J E N H A U C
DIM A B C D E F H J K L N Q R U
STYLE 2: PIN 1. 2. 3. 4.
BASE COLLECTOR BASE EMITTER
CASE 316-01 ISSUE D
MRF173 MRF173CQ 6
MOTOROLA RF DEVICE DATA
MOTOROLA RF DEVICE DATA
MRF173 MRF173CQ 7
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488
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MRF173 MRF173CQ 8
MRF173/D MOTOROLA RF DEVICE DATA

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